complementary silicon power plastic transistors . . . designed for low voltage, lowpower, highgain audio amplifier applications. ? collectoremitter sustaining voltage e v ceo(sus) = 25 vdc (min) @ i c = 10 madc ? high dc current gain e h fe = 70 (min) @ i c = 500 madc = 45 (min) @ i c = 2.0 adc = 10 (min) @ i c = 5.0 adc ? low collectoremitter saturation voltage e v ce(sat) = 0.3 vdc (max) @ i c = 500 madc = 0.75 vdc (max) @ i c = 2.0 adc ? high currentgain e bandwidth product e f t = 65 mhz (min) @ i c = 100 madc ? annular construction for low leakage e i cbo = 100 nadc @ rated v cb ??????????????????????? ??????????????????????? maximum ratings ???????????? ???????????? rating ????? ????? symbol ?????? ?????? value ??? ??? unit ???????????? ???????????? collectorbase voltage ????? ????? v cb ?????? ?????? 40 ??? ??? vdc ???????????? ???????????? collectoremitter voltage ????? ????? v ceo ?????? ?????? 25 ??? ??? vdc ???????????? ???????????? emitterbase voltage ????? ????? v eb ?????? ?????? 8.0 ??? ??? vdc ???????????? ???????????? collector current e continuous peak ????? ????? i c ?????? ?????? 5.0 10 ??? ??? adc ???????????? ???????????? base current ????? ????? i b ?????? ?????? 1.0 ??? ??? adc ???????????? ? ?????????? ? ???????????? total power dissipation @ t c = 25 c derate above 25 c ????? ? ??? ? ????? p d ?????? ? ???? ? ?????? 15 0.12 ??? ? ? ? ??? watts w/ c ???????????? ???????????? total power dissipation @ t a = 25 c derate above 25 c ????? ????? p d ?????? ?????? 1.5 0.012 ??? ??? watts w/ c ???????????? ? ?????????? ? ???????????? operating and storage junction temperature range ????? ? ??? ? ????? t j , t stg ?????? ? ???? ? ?????? 65 to +150 ??? ? ? ? ??? c ??????????????????????? ??????????????????????? thermal characteristics ???????????? ???????????? characteristic ????? ????? symbol ?????? ?????? max ??? ??? unit ???????????? thermal resistance, junction to case ????? q jc ?????? 8.34 ??? c/w ???????????? ???????????? thermal resistance, junction to ambient ????? ????? q ja ?????? ?????? 83.4 ??? ??? c/w preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2002 april, 2002 rev. 10 1 publication order number: mje200/d mje200 mje210 5 ampere power transistors complementary silicon 25 volts 15 watts *on semiconductor preferred device * npn pnp * case 7709 to225aa 3 2 1 style 1: pin 1. emitter 2. collector 3. base
mje200 mje210 http://onsemi.com 2 16 20 figure 1. power derating t, temperature ( c) 0 40 60 100 120 160 12 p d , power dissipation (watts) 1.6 0 1.2 8.0 0.8 4.0 0.4 80 140 t c p d , power dissipation (watts) t a ????????????????????????????????? ? ??????????????????????????????? ? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????????? ?????????????????????? collectoremitter sustaining voltage (1) (i c = 10 madc, i b = 0) ????? ????? v ceo(sus) ??? ??? 25 ???? ???? e ??? ??? vdc ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collector cutoff current (v cb = 40 vdc, i e = 0) (v cb = 40 vdc, i e = 0, t j = 125 c) ????? ? ??? ? ? ??? ? ????? i cbo ??? ? ? ? ? ? ? ??? e e ???? ? ?? ? ? ?? ? ???? 100 100 ??? ? ? ? ? ? ? ??? nadc m adc ?????????????????????? ?????????????????????? emitter cutoff current (v be = 8.0 vdc, i c = 0) ????? ????? i ebo ??? ??? e ???? ???? 100 ??? ??? nadc ????????????????????????????????? ????????????????????????????????? on characteristics ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? dc current gain (1) (i c = 500 madc, v ce = 1.0 vdc) (i c = 2.0 adc, v ce = 1.0 vdc) (i c = 5.0 adc, v ce = 2.0 vdc) ????? ? ??? ? ? ??? ? ????? h fe ??? ? ? ? ? ? ? ??? 70 45 10 ???? ? ?? ? ? ?? ? ???? e 180 e ??? ? ? ? ? ? ? ??? e ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collectoremitter saturation voltage (1) (i c = 500 madc, i b = 50 madc) (i c = 2.0 adc, i b = 200 madc) (i c = 5.0 adc, i b = 1.0 adc) ????? ? ??? ? ? ??? ? ? ??? ? ????? v ce(sat) ??? ? ? ? ? ? ? ? ? ? ??? e e e ???? ? ?? ? ? ?? ? ? ?? ? ???? 0.3 0.75 1.8 ??? ? ? ? ? ? ? ? ? ? ??? vdc ?????????????????????? ?????????????????????? baseemitter saturation voltage (1) (i c = 5.0 adc, i b = 1.0 adc) ????? ????? v be(sat) ??? ??? e ???? ???? 2.5 ??? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? baseemitter on voltage (1) (i c = 2.0 adc, v ce = 1.0 vdc) ????? ? ??? ? ????? v be(on) ??? ? ? ? ??? e ???? ? ?? ? ???? 1.6 ??? ? ? ? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? currentgain e bandwidth product (2) (i c = 100 madc, v ce = 10 vdc, f test = 10 mhz) ????? ? ??? ? ????? f t ??? ? ? ? ??? 65 ???? ? ?? ? ???? e ??? ? ? ? ??? mhz ?????????????????????? ? ???????????????????? ? ?????????????????????? output capacitance (v cb = 10 vdc, i e = 0, f = 0.1 mhz) mje200 mje210 ????? ? ??? ? ????? c ob ??? ? ? ? ??? e e ???? ? ?? ? ???? 80 120 ??? ? ? ? ??? pf (1) pulse test: pulse width = 300 m s, duty cycle 2.0%. (2) f t = ? h fe ?? f test .
mje200 mje210 http://onsemi.com 3 figure 2. switching time test circuit +11 v 25 m s 0 -9.0 v r b -4 v d 1 scope v cc +30 v r c t r , t f 10 ns duty cycle = 1.0% 51 r b and r c varied to obtain desired current levels d 1 must be fast recovery type, e.g.: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma 1k i c , collector current (amps) v cc = 30 v i c /i b = 10 t j = 25 c t, time (ns) 500 300 200 100 50 t d 30 20 10 5 1 0.01 0.03 0.05 0.5 0.2 0.1 0.3 10 figure 3. turnon time 3 2 5 2 13 t r mje200 mje210 0.02 t, time (ms) 0.01 0.02 0.05 1.0 2.0 5.0 10 20 50 100 200 0.1 0.5 0.2 1.0 0.2 0.1 0.05 r(t), transient thermal resistance q jc (t) = r(t) q jc q jc = 8.34 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) q jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.2 0 (single pulse) (normalized) figure 4. thermal response 0.5 d = 0.5 0.05 0.3 0.7 0.07 0.03 0.02 0.1 0.02 0.01
mje200 mje210 http://onsemi.com 4 10 v ce , collector-emitter voltage (volts) 0.1 30 7.0 0.7 bonding wire limited thermally limited @ t c = 25 c (single pulse) second breakdown limited curves apply below rated v ceo figure 5. active region safe operating area 500 m s dc 5.0 20 10 7.0 5.0 3.0 2.0 1.0 100 m s t j = 150 c i c , collector current (amp) 0.2 0.5 1.0 2.0 3.0 0.3 1.0ms 5.0ms there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 5 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 4. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 10k i c , collector current (amps) 10 5k 3k 2k 1k 500 300 200 100 50 figure 6. turnoff time t, time (ns) 30 20 0.01 0.03 0.05 0.5 0.2 0.02 0.1 0.3 10 5 2 13 v cc = 30 v i c /i b = 10 i b1 = i b2 t j = 25 c t s t f v r , reverse voltage (volts) 20 40 100 200 50 figure 7. capacitance 70 20 10 6.0 4.0 2.0 1.0 0.4 c, capacitance (pf) 0.6 t j = 25 c c ib c ob mje200 (npn) mje210 (pnp) 30 mje200 mje210
mje200 mje210 http://onsemi.com 5 i c , collector current (amp) i c , collector current (amp) i c , collector current (amp) h fe , dc current gain figure 8. dc current gain figure 9. aono voltage i c , collector current (amp) 200 400 0.07 0.1 0.3 5.0 0.05 100 80 60 40 0.2 i c , collector current (amp) figure 10. temperature coefficients 20 0.7 1.0 3.0 2.0 0.5 25 c t j = 150 c -55 c 2.0 0.05 i c , collector current (amp) 5.0 1.6 1.2 0.8 0.4 0 3.0 2.0 0.07 0.2 0.1 0.5 0.3 1.0 0.7 t j = 25 c v, voltage (volts) npn mje200 pnp mje210 0.07 0.1 0.3 5.0 0.05 0.2 0.7 1.0 3.0 2.0 0.5 200 400 100 80 60 40 20 h fe , dc current gain 25 c t j = 150 c -55 c v ce = 1.0 v v ce = 2.0 v v, voltage (volts) v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 1.0 v q vc for v ce(sat) q vb for v be 2.0 0.05 1.6 1.2 0.8 0.4 0 3.0 2.0 0.07 0.2 0.1 0.5 0.3 1.0 0.7 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 1.0 v v , temperature coefficients (mv/ c) q +2.5 +2.0 +1.5 +1.0 0 -0.5 -1.0 -1.5 -2.0 +0.5 -2.5 0.07 0.1 0.3 5.0 0.05 0.2 0.7 1.0 3.0 2.0 0.5 *applies for i c /i b h fe/3 25 c to 150 c -55 c to 25 c 25 c to 150 c -55 c to 25 c v , temperature coefficients (mv/ c) q +2.5 +2.0 +1.5 +1.0 0 -0.5 -1.0 -1.5 -2.0 +0.5 -2.5 0.07 0.1 0.3 5.0 0.05 0.2 0.7 1.0 3.0 2.0 0.5 * q vc for v ce(sat) q vb for v be *applies for i c /i b h fe/3 25 c to 150 c -55 c to 25 c 25 c to 150 c -55 c to 25 c v ce = 1.0 v v ce = 2.0 v 5.0
mje200 mje210 http://onsemi.com 6 package dimensions case 7709 issue w to225aa notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. b a m k f c q h v g s d j r u 13 2 2 pl m a m 0.25 (0.010) b m m a m 0.25 (0.010) b m dim min max min max millimeters inches a 0.425 0.435 10.80 11.04 b 0.295 0.305 7.50 7.74 c 0.095 0.105 2.42 2.66 d 0.020 0.026 0.51 0.66 f 0.115 0.130 2.93 3.30 g 0.094 bsc 2.39 bsc h 0.050 0.095 1.27 2.41 j 0.015 0.025 0.39 0.63 k 0.575 0.655 14.61 16.63 m 5 typ 5 typ q 0.148 0.158 3.76 4.01 r 0.045 0.065 1.15 1.65 s 0.025 0.035 0.64 0.88 u 0.145 0.155 3.69 3.93 v 0.040 --- 1.02 --- style 1: pin 1. emitter 2. collector 3. base
mje200 mje210 http://onsemi.com 7 notes
mje200 mje210 http://onsemi.com 8 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mje200/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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